 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single D FEATURES 200 0.18 * * * * * * * * Surface Mount Low-Profile Through-Hole Available in Tape and Reel Dynamic dV/dt Rating 150 C Operating Temperature Fast Switching Fully Avalanche Rated Lead (Pb)-free Available Available RoHS* COMPLIANT I2PAK (TO-262) D2PAK (TO-263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF640L/SiHF640L) is available for low-profile applications. G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRF640SPbF SiHF640S-E3 IRF640S SiHF640S D2PAK (TO-263) IRF640STRLPbFa SiHF6340STL-E3a IRF640STRLa SiHF640STLa D2PAK (TO-263) IRF640STRRPbFa SiHF640STR-E3a IRF640STRRa SiHF640STRa I2PAK (TO-262) IRF640LPbF SiHF640L-E3 IRF640L SiHF640L ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TC = 25 C TA = 25 C VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg for 10 s LIMIT 200 20 18 11 72 1.0 580 18 13 3.1 130 5.0 - 55 to + 150 300d UNIT V A W/C mJ A mJ W V/ns C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 2.7 mH, RG = 25 , IAS = 18 A (see fig. 12). c. ISD 18 A, dI/dt 150 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. Uses IRF640/SiHF640 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91037 S-81241-Rev. A, 07-Jul-08 www.vishay.com 1 IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB Mounted, Steady-State)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 1.0 UNIT C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mAc VDS = VGS, ID = 250 A VGS = 20 V VDS = 200 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 11 Ab VDS = 50 V, ID = 11 Ad 200 2.0 6.7 0.29 - 4.0 100 25 250 0.18 - V V/C V nA A S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5d - 1300 430 130 14 51 45 36 70 13 39 ns nC pF VGS = 10 V ID = 18 A, VDS = 160 V, see fig. 6 and 13b, c - VDD = 100 V, ID = 18 A, RG = 9.1 , RD = 5.4 , see fig. 10b, c - - 300 3.4 18 A 72 2.0 610 7.1 V ns C G S TJ = 25 C, IS = 18 A, VGS = 0 Vb TJ = 25 C, IF = 18 A, dI/dt = 100 A/sb, c Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Uses IRF640/SiHF640 data and test conditions. www.vishay.com 2 Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TJ = 25 C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TJ = 175 C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91037 S-81241-Rev. A, 07-Jul-08 www.vishay.com 3 IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix RD VDS VGS RG D.U.T. + - VDD 10 V Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS Fig. 9 - Maximum Drain Current vs. Case Temperature td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 15 V VDS tp VDS L Driver RG 20 V tp D.U.T. IAS 0.01 + A - VDD IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Document Number: 91037 S-81241-Rev. A, 07-Jul-08 www.vishay.com 5 IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k 12 V 0.2 F 0.3 F 10 V QGS QG QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + + - RG * * * * dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91037. Document Number: 91037 S-81241-Rev. A, 07-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of IRF640L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |